Цифровой драйвер IGBT. Алгоритмы управления и методы детектирования авариных режимов
Ключевые слова:
драйвер затвора, IGBT, алгоритмы защиты, защита от перегрузки по току, защита от перенапряжения
Аннотация
Эффективное управление силовыми транзисторами IGBT и их защита от аварийных режимов критически важны для повышения надежности и эффективности современных систем силовой электроники, используемых в тяговых применениях, горнодобывающем оборудовании, нефтедобывающих и насосных станциях, экологичном электротранспорте. Для управления силовым транзистором применяют платы-драйверы, управляющие затвором транзисторного модуля. Такая плата должна обеспечивать надежную коммутацию и целостность транзисторного модуля. Она получает сигнал с верхнего уровня и преобразует его в управляющее напряжение затвора транзистора, при этом при аварийной ситуации драйвер должен сам отключить транзистор и сообщить об этом сигналом верхнему уровню. Платы драйверов транзисторов могут выполнять функции защиты IGBT с использованием как аппаратных, так и программных подходов.
Описаны алгоритмы управления и защиты, реализованные в интеллектуальном драйвере IGBT на базе бюджетного микроконтроллера. Использование микроконтроллера делает конструкцию управления затвора более гибкой и позволяет точно настраивать пороги защиты. Драйвер защищает IGBT от короткого замыкания, перегрузки по току, перенапряжения, контролирует подачу напряжения и управляет процессами включения и выключения транзистора. Для решения указанных задач рассмотрены как аппаратные решения с описанием критически важных узлов платы-драйвера, так и программные, с описанием реализации заложенных алгоритмов. Эффективность спроектированной схемы и разработанных алгоритмов защиты проверена экспериментально с помощью специализированного испытательного стенда. Представлены полученные осциллограммы результатов исследования.
Литература
1. Dmitrievskii V., Prakht V., Anuchin A., Kazakbaev V. Traction Synchronous Homopolar Motor: Simplified Computation Technique and Experimental Validation // IEEE Access. 2020. V. 8. Pp. 185112–185120.
2. Dmitrievskii V., Prakht V., Kazakbaev V., Anuchin A. Comparison of Interior Permanent Magnet and Synchronous Homopolar Motors for a Mining Dump Truck Traction Drive Operated in Wide Constant Power Speed Range // Mathematics. 2022. V. 10. Pp. 1581—1591.
3. Prakht V., Dmitrievskii V., Anuchin A., Kazakbaev V. Inverter Volt-ampere Capacity Reduction by Optimization of the Traction Synchronous Homopolar Motor // Mathematics. 2021. V. 9. Pp. 2859—2868.
4. Chen H.. Zhang D.. Meng X. Analysis of Three-phase 12/8 Structure Switched Reluctance Motor Drive // Proc. IEEE Intern. Symp. Industrial Electronics. Pusan, 2001. V. 2. Pp. 781—785.
5. Xu S., Chen H., Cheng H., Yang S. Research on Parallel Switching Device Current Sharing of Switched Reluctance Motor // Proc. IEEE Conf. Russian Young Researchers in Electrical and Electronic Eng. St. Petersburg, 2017. Pp. 1070—1074.
6. Hill H.C., Legue J.B.S. Electrical Equipment for Oil-field Operations // Electrical Eng. 1931. V. 2. Pp. 753—754.
7. Асташев М.Г. и др. Эффективность полупроводниковых регуляторов мощности при дискретном управлении // Электротехника. 2024. № 6. С. 17—24.
8. Hefner A.R., Blackburn D.L., Galloway K.F. The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT) // IEEE Trans. Nuclear Sci. 1986. V. 33. Pp. 1428—1434.
9. Hefner A.R., Blackburn D.L. Performance Trade-off for the Insulated Gate Bipolar Transistor: Buffer Layer Versus Base Lifetime Reduction // Proc. XVII Annual IEEE Power Electronics Specialists Conf. Vancouver, 1986. Pp. 27—38.
10. Nakagawa A., Nakamura S., Shinohe T. Rapid Convergence Bipolar-MOS Composite Device Model — Tonadder- and Its Application to Bipolar-mode MOSFETs (IGBT) // Proc. V Intern. Conf. Numerical Analysis of Semiconductor Devices and Integrated Circuits. Dublin, 1987. Pp. 295—300.
11. Horii K. e. a. Large Current Output Digital Gate Driver for 6500 V, 1000 A IGBT Module to Reduce Switching Loss and Collector Current Overshoot // IEEE Trans. Power Electronics. 2023. V. 13. Pp. 8075—8088.
12. Parker M., Sahin I., Mathieson R., Finney S., Judge P.D. Investigation Into Active Gate-driving Timing Resolution and Complexity Requirements for a 1200 V 400 a Silicon Carbide Half Bridge Module // IEEE Open J. Power Electronics. 2023. V. 4. Pp. 161—175.
13. Lou Z. e. a. IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control // IEEE Access. 2023. V. 11. Pp. 6632—6640.
14. Michel L. e. a. FPGA Implementation of an Optimal IGBT Gate Driver Based on Posicast Control // IEEE Trans. Power Electronics. 2013. V. 28. Pp. 2569—2575.
15. Nouman Z., Knobloch J., Klima B. FPGA Usage for Power Inverters Diagnostics // Proc. 39th Annual Conf. IEEE Industrial Electronics Soci. Vienna, 2013. Pp. 785—789.
16. Texas Instruments [Электрон. ресурс] https://qeeniu.net/lit/ds/symlink/tms320f280023.pdf?ts=1692243526687 (дата обращения 30.09.2024).
17. Tao H. e. a. A Diagnosis Method for IGBT and Current Sensor Faults of Two-level Inverter Used in Traction Systems // Proc. CAA Symp. Fault Detection, Supervision, and Safety for Technical Processes. Chengdu, 2021. Pp. 1—6.
18. Sathik M. e. a. Short Circuit Detection and Fault Current Limiting Method for IGBTs // IEEE Trans. Device and Materials Reliability. 2020. V. 20. Pp. 686—693.
19. Power Integrations [Электрон. ресурс] https://www.power.com/sites/default/files/documents/1SP0635_Manual.pdf (дата обращения 30.09.2024).
20. Zhukov A. e. a. Development of an IGBT Driver Test Bench // Proc. XIX Intern. Sci. Techn. Conf. Alternating Current Electric Drives. Ekaterinburg, 2023. Pp. 1—5.
---
Для цитирования: Савкин Д.И., Золотов А.Р., Ледовских А.А., Жуков А.Н., Григорьев С.С., Гармашова В.А. Цифровой драйвер IGBT. Алгоритмы управления и методы детектирования авариных режимов // Вестник МЭИ. 2025. № 2. С. 24—34. DOI: 10.24160/1993-6982-2025-2-24-34
---
Конфликт интересов: авторы заявляют об отсутствии конфликта интересов
#
1. Dmitrievskii V., Prakht V., Anuchin A., Kazakbaev V. Traction Synchronous Homopolar Motor: Simplified Computation Technique and Experimental Validation. IEEE Access. 2020;8:185112–185120.
2. Dmitrievskii V., Prakht V., Kazakbaev V., Anuchin A. Comparison of Interior Permanent Magnet and Synchronous Homopolar Motors for a Mining Dump Truck Traction Drive Operated in Wide Constant Power Speed Range. Mathematics. 2022;10:1581—1591.
3. Prakht V., Dmitrievskii V., Anuchin A., Kazakbaev V. Inverter Volt-ampere Capacity Reduction by Optimization of the Traction Synchronous Homopolar Motor. Mathematics. 2021;9:2859—2868.
4. Chen H.. Zhang D.. Meng X. Analysis of Three-phase 12/8 Structure Switched Reluctance Motor Drive. Proc. IEEE Intern. Symp. Industrial Electronics. Pusan, 2001;2:781—785.
5. Xu S., Chen H., Cheng H., Yang S. Research on Parallel Switching Device Current Sharing of Switched Reluctance Motor. Proc. IEEE Conf. Russian Young Researchers in Electrical and Electronic Eng. St. Petersburg, 2017:1070—1074.
6. Hill H.C., Legue J.B.S. Electrical Equipment for Oil-field Operations. Electrical Eng. 1931;2:753—754.
7. Astashev M.G. i dr. Effektivnost' Poluprovodnikovykh Regulyatorov Moshchnosti pri Diskretnom Upravlenii. Elektrotekhnika. 2024;6:17—24. (in Russian).
8. Hefner A.R., Blackburn D.L., Galloway K.F. The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT). IEEE Trans. Nuclear Sci. 1986;33:1428—1434.
9. Hefner A.R., Blackburn D.L. Performance Trade-off for the Insulated Gate Bipolar Transistor: Buffer Layer Versus Base Lifetime Reduction. Proc. XVII Annual IEEE Power Electronics Specialists Conf. Vancouver, 1986:27—38.
10. Nakagawa A., Nakamura S., Shinohe T. Rapid Convergence Bipolar-MOS Composite Device Model — Tonadder- and Its Application to Bipolar-mode MOSFETs (IGBT). Proc. V Intern. Conf. Numerical Analysis of Semiconductor Devices and Integrated Circuits. Dublin, 1987:295—300.
11. Horii K. e. a. Large Current Output Digital Gate Driver for 6500 V, 1000 A IGBT Module to Reduce Switching Loss and Collector Current Overshoot. IEEE Trans. Power Electronics. 2023;13:8075—8088.
12. Parker M., Sahin I., Mathieson R., Finney S., Judge P.D. Investigation Into Active Gate-driving Timing Resolution and Complexity Requirements for a 1200 V 400 a Silicon Carbide Half Bridge Module. IEEE Open J. Power Electronics. 2023;4:161—175.
13. Lou Z. e. a. IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control. IEEE Access. 2023;11:6632—6640.
14. Michel L. e. a. FPGA Implementation of an Optimal IGBT Gate Driver Based on Posicast Control. IEEE Trans. Power Electronics. 2013;28:2569—2575.
15. Nouman Z., Knobloch J., Klima B. FPGA Usage for Power Inverters Diagnostics. Proc. 39th Annual Conf. IEEE Industrial Electronics Soci. Vienna, 2013:785—789.
16. Texas Instruments [Elektron. Resurs] https://qeeniu.net/lit/ds/symlink/tms320f280023.pdf?ts=1692243526687 (Data Obrashcheniya 30.09.2024).
17. Tao H. e. a. A Diagnosis Method for IGBT and Current Sensor Faults of Two-level Inverter Used in Traction Systems. Proc. CAA Symp. Fault Detection, Supervision, and Safety for Technical Processes. Chengdu, 2021:1—6.
18. Sathik M. e. a. Short Circuit Detection and Fault Current Limiting Method for IGBTs. IEEE Trans. Device and Materials Reliability. 2020;20:686—693.
19. Power Integrations [Elektron. Resurs] https://www.power.com/sites/default/files/documents/1SP0635_Manual.pdf (Data Obrashcheniya 30.09.2024).
20. Zhukov A. e. a. Development of an IGBT Driver Test Bench. Proc. XIX Intern. Sci. Techn. Conf. Alternating Current Electric Drives. Ekaterinburg, 2023:1—5
---
For citation: Savkin D.I., Zolotov A.R., Ledovskikh A.A., Zhukov A.N., Grigor’ev S.S., Garmashova V.A. A Digital IGBT Driver. Control Algorithms and Emergency Modes Detection Methods. Bulletin of MPEI. 2025;2:24—34. (in Russian). DOI: 10.24160/1993-6982-2025-2-24-34
---
Conflict of interests: the authors declare no conflict of interest
2. Dmitrievskii V., Prakht V., Kazakbaev V., Anuchin A. Comparison of Interior Permanent Magnet and Synchronous Homopolar Motors for a Mining Dump Truck Traction Drive Operated in Wide Constant Power Speed Range // Mathematics. 2022. V. 10. Pp. 1581—1591.
3. Prakht V., Dmitrievskii V., Anuchin A., Kazakbaev V. Inverter Volt-ampere Capacity Reduction by Optimization of the Traction Synchronous Homopolar Motor // Mathematics. 2021. V. 9. Pp. 2859—2868.
4. Chen H.. Zhang D.. Meng X. Analysis of Three-phase 12/8 Structure Switched Reluctance Motor Drive // Proc. IEEE Intern. Symp. Industrial Electronics. Pusan, 2001. V. 2. Pp. 781—785.
5. Xu S., Chen H., Cheng H., Yang S. Research on Parallel Switching Device Current Sharing of Switched Reluctance Motor // Proc. IEEE Conf. Russian Young Researchers in Electrical and Electronic Eng. St. Petersburg, 2017. Pp. 1070—1074.
6. Hill H.C., Legue J.B.S. Electrical Equipment for Oil-field Operations // Electrical Eng. 1931. V. 2. Pp. 753—754.
7. Асташев М.Г. и др. Эффективность полупроводниковых регуляторов мощности при дискретном управлении // Электротехника. 2024. № 6. С. 17—24.
8. Hefner A.R., Blackburn D.L., Galloway K.F. The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT) // IEEE Trans. Nuclear Sci. 1986. V. 33. Pp. 1428—1434.
9. Hefner A.R., Blackburn D.L. Performance Trade-off for the Insulated Gate Bipolar Transistor: Buffer Layer Versus Base Lifetime Reduction // Proc. XVII Annual IEEE Power Electronics Specialists Conf. Vancouver, 1986. Pp. 27—38.
10. Nakagawa A., Nakamura S., Shinohe T. Rapid Convergence Bipolar-MOS Composite Device Model — Tonadder- and Its Application to Bipolar-mode MOSFETs (IGBT) // Proc. V Intern. Conf. Numerical Analysis of Semiconductor Devices and Integrated Circuits. Dublin, 1987. Pp. 295—300.
11. Horii K. e. a. Large Current Output Digital Gate Driver for 6500 V, 1000 A IGBT Module to Reduce Switching Loss and Collector Current Overshoot // IEEE Trans. Power Electronics. 2023. V. 13. Pp. 8075—8088.
12. Parker M., Sahin I., Mathieson R., Finney S., Judge P.D. Investigation Into Active Gate-driving Timing Resolution and Complexity Requirements for a 1200 V 400 a Silicon Carbide Half Bridge Module // IEEE Open J. Power Electronics. 2023. V. 4. Pp. 161—175.
13. Lou Z. e. a. IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control // IEEE Access. 2023. V. 11. Pp. 6632—6640.
14. Michel L. e. a. FPGA Implementation of an Optimal IGBT Gate Driver Based on Posicast Control // IEEE Trans. Power Electronics. 2013. V. 28. Pp. 2569—2575.
15. Nouman Z., Knobloch J., Klima B. FPGA Usage for Power Inverters Diagnostics // Proc. 39th Annual Conf. IEEE Industrial Electronics Soci. Vienna, 2013. Pp. 785—789.
16. Texas Instruments [Электрон. ресурс] https://qeeniu.net/lit/ds/symlink/tms320f280023.pdf?ts=1692243526687 (дата обращения 30.09.2024).
17. Tao H. e. a. A Diagnosis Method for IGBT and Current Sensor Faults of Two-level Inverter Used in Traction Systems // Proc. CAA Symp. Fault Detection, Supervision, and Safety for Technical Processes. Chengdu, 2021. Pp. 1—6.
18. Sathik M. e. a. Short Circuit Detection and Fault Current Limiting Method for IGBTs // IEEE Trans. Device and Materials Reliability. 2020. V. 20. Pp. 686—693.
19. Power Integrations [Электрон. ресурс] https://www.power.com/sites/default/files/documents/1SP0635_Manual.pdf (дата обращения 30.09.2024).
20. Zhukov A. e. a. Development of an IGBT Driver Test Bench // Proc. XIX Intern. Sci. Techn. Conf. Alternating Current Electric Drives. Ekaterinburg, 2023. Pp. 1—5.
---
Для цитирования: Савкин Д.И., Золотов А.Р., Ледовских А.А., Жуков А.Н., Григорьев С.С., Гармашова В.А. Цифровой драйвер IGBT. Алгоритмы управления и методы детектирования авариных режимов // Вестник МЭИ. 2025. № 2. С. 24—34. DOI: 10.24160/1993-6982-2025-2-24-34
---
Конфликт интересов: авторы заявляют об отсутствии конфликта интересов
#
1. Dmitrievskii V., Prakht V., Anuchin A., Kazakbaev V. Traction Synchronous Homopolar Motor: Simplified Computation Technique and Experimental Validation. IEEE Access. 2020;8:185112–185120.
2. Dmitrievskii V., Prakht V., Kazakbaev V., Anuchin A. Comparison of Interior Permanent Magnet and Synchronous Homopolar Motors for a Mining Dump Truck Traction Drive Operated in Wide Constant Power Speed Range. Mathematics. 2022;10:1581—1591.
3. Prakht V., Dmitrievskii V., Anuchin A., Kazakbaev V. Inverter Volt-ampere Capacity Reduction by Optimization of the Traction Synchronous Homopolar Motor. Mathematics. 2021;9:2859—2868.
4. Chen H.. Zhang D.. Meng X. Analysis of Three-phase 12/8 Structure Switched Reluctance Motor Drive. Proc. IEEE Intern. Symp. Industrial Electronics. Pusan, 2001;2:781—785.
5. Xu S., Chen H., Cheng H., Yang S. Research on Parallel Switching Device Current Sharing of Switched Reluctance Motor. Proc. IEEE Conf. Russian Young Researchers in Electrical and Electronic Eng. St. Petersburg, 2017:1070—1074.
6. Hill H.C., Legue J.B.S. Electrical Equipment for Oil-field Operations. Electrical Eng. 1931;2:753—754.
7. Astashev M.G. i dr. Effektivnost' Poluprovodnikovykh Regulyatorov Moshchnosti pri Diskretnom Upravlenii. Elektrotekhnika. 2024;6:17—24. (in Russian).
8. Hefner A.R., Blackburn D.L., Galloway K.F. The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT). IEEE Trans. Nuclear Sci. 1986;33:1428—1434.
9. Hefner A.R., Blackburn D.L. Performance Trade-off for the Insulated Gate Bipolar Transistor: Buffer Layer Versus Base Lifetime Reduction. Proc. XVII Annual IEEE Power Electronics Specialists Conf. Vancouver, 1986:27—38.
10. Nakagawa A., Nakamura S., Shinohe T. Rapid Convergence Bipolar-MOS Composite Device Model — Tonadder- and Its Application to Bipolar-mode MOSFETs (IGBT). Proc. V Intern. Conf. Numerical Analysis of Semiconductor Devices and Integrated Circuits. Dublin, 1987:295—300.
11. Horii K. e. a. Large Current Output Digital Gate Driver for 6500 V, 1000 A IGBT Module to Reduce Switching Loss and Collector Current Overshoot. IEEE Trans. Power Electronics. 2023;13:8075—8088.
12. Parker M., Sahin I., Mathieson R., Finney S., Judge P.D. Investigation Into Active Gate-driving Timing Resolution and Complexity Requirements for a 1200 V 400 a Silicon Carbide Half Bridge Module. IEEE Open J. Power Electronics. 2023;4:161—175.
13. Lou Z. e. a. IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control. IEEE Access. 2023;11:6632—6640.
14. Michel L. e. a. FPGA Implementation of an Optimal IGBT Gate Driver Based on Posicast Control. IEEE Trans. Power Electronics. 2013;28:2569—2575.
15. Nouman Z., Knobloch J., Klima B. FPGA Usage for Power Inverters Diagnostics. Proc. 39th Annual Conf. IEEE Industrial Electronics Soci. Vienna, 2013:785—789.
16. Texas Instruments [Elektron. Resurs] https://qeeniu.net/lit/ds/symlink/tms320f280023.pdf?ts=1692243526687 (Data Obrashcheniya 30.09.2024).
17. Tao H. e. a. A Diagnosis Method for IGBT and Current Sensor Faults of Two-level Inverter Used in Traction Systems. Proc. CAA Symp. Fault Detection, Supervision, and Safety for Technical Processes. Chengdu, 2021:1—6.
18. Sathik M. e. a. Short Circuit Detection and Fault Current Limiting Method for IGBTs. IEEE Trans. Device and Materials Reliability. 2020;20:686—693.
19. Power Integrations [Elektron. Resurs] https://www.power.com/sites/default/files/documents/1SP0635_Manual.pdf (Data Obrashcheniya 30.09.2024).
20. Zhukov A. e. a. Development of an IGBT Driver Test Bench. Proc. XIX Intern. Sci. Techn. Conf. Alternating Current Electric Drives. Ekaterinburg, 2023:1—5
---
For citation: Savkin D.I., Zolotov A.R., Ledovskikh A.A., Zhukov A.N., Grigor’ev S.S., Garmashova V.A. A Digital IGBT Driver. Control Algorithms and Emergency Modes Detection Methods. Bulletin of MPEI. 2025;2:24—34. (in Russian). DOI: 10.24160/1993-6982-2025-2-24-34
---
Conflict of interests: the authors declare no conflict of interest
Опубликован
2024-12-16
Выпуск
Раздел
Электротехнические комплексы и системы (технические науки) (2.4.2)
